REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDIES OF THE GROWTH OF STRAINED INXGA1-XAS ON GAAS SUBSTRATE BY MIGRATION-ENHANCED EPITAXY

被引：4

作者：

CHEN, YC

BHATTACHARYA, PK

SINGH, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 07期

关键词：

D O I：

10.1063/1.103594

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reflection high-energy electron diffraction oscillations have been studied during the growth of strained InxGa1-xAs on GaAs by molecular beam epitaxy and migration-enhanced epitaxy. The oscillations decay rapidly for x≳0.2 during molecular beam epitaxy, while they persist for a long while during migration-enhanced epitaxy. We believe that the altered surface reconstruction pattern in the latter case changes the growth mode from three-dimensional to a near perfect two-dimensional mode for high strain values. Using migration-enhanced epitaxy, we demonstrate improved channel mobility and performance of GaAs-based modulation-doped field-effect transistors and narrower linewidths in the low-temperature excitonic photoluminescence of In 0.1Ga0.9As/Al0.3Ga0.7As quantum wells.

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页码：692 / 694

页数：3

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