COPPER-RELATED DEFECTS IN IN0.53GA0.47AS GROWN BY LIQUID-PHASE EPITAXY

被引：7

作者：

TILLY, LP

GRIMMEISS, HG

HANSSON, PO

机构：

[1] Department of Solid State Physics, Lund University, Box 118

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.47.1249

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-purity In0.53Ga0.47As lattice matched to InP was grown by liquid-phase epitaxy and used for the study of Cu-related defects. The samples had a free-electron carrier concentration of n = 5.0 X 10(14) cm-3 and an electron mobility of mu77 K = 44 000 cm2/V s. A Cu-related acceptor level 25 meV above the valence-band edge was identified using photoluminescence measurements. Comparing the energy position of this shallow acceptor level with the E(v) + 157.8-meV Cu-acceptor level in GaAs supports the assumption of an internal energy reference level [J. M. Langer, C. Delerue, M. Lannoo, and H. Heinrich, Phys. Rev. B38, 7723 (1988)] common to GaAs and InxGa1-xAs.

引用

页码：1249 / 1255

页数：7

共 64 条

[1]

AVERKIEV NS, 1983, SOV PHYS SEMICOND+, V17, P61

[2]

AVERKIEV NS, 1986, SOV PHYS SEMICOND+, V20, P1014

[3] DIFFUSION OF CD IN INP AND IN0.53GA0.47AS [J].