NEAR-INFRARED CATHODOLUMINESCENCE IMAGING OF DEFECT DISTRIBUTIONS IN IN0.2GA0.8AS/GAAS MULTIPLE QUANTUM-WELLS GROWN ON PREPATTERNED GAAS

被引：13

作者：

RICH, DH

RAJKUMAR, KC

CHEN, L

MADHUKAR, A

GRUNTHANER, FJ

机构：

[1] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90089

[2] CALTECH,CTR SPACE MICROELECTR TECHNOL,JET PROPULS LAB,PASADENA,CA 91109

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 02期

关键词：

D O I：

10.1063/1.108225

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The defect distribution in a highly strained In0.2Gao.8As/GaAs multiple-quantum-well (MQW) structure grown on a patterned GaAs substrate is examined with cathodoluminescence imaging and spectroscopy in the near infrared. By spatially correlating the luminescence arising from the MQW exciton recombination (lambda almost-equal-to 950 nm) with the longer wavelength (1000 less-than-or-similar lambda less-than-or-similar 1200 nm) luminescence arising from the defect-induced recombination, we demonstrate that it is possible to determine the regions of highest film quality in both the mesa and valley regions. The present approach enables a judicious determination of the optimal regions to be used for active pixels in InGaAs/GaAs spatial light modulators.

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页码：222 / 224

页数：3

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