Based on the solution of the Boltzmann transport equation for a homogeneous base transistor [A. A. Grinberg and S. Luryi, Solid-St. Electron, 35, 1299 (1992)] a very instructive model of carrier transport in a short base transistor is developed. Essential to the above is a replacement of the Schottky boundary conditions. Using modified boundary conditions to the diffusion equation, the transport current density in a homogeneous base is predicted, to an accuracy within +/- 3%, regardless of the base width, covering the whole range from the diffusion controlled regime to the thermionic regime. Based on the modified boundary conditions a corrected Moll-Ross-Kroemer relation valid for a very short non-homogeneous base is derived. Correspondingly, an expression for the base transit time is derived.
