HIGHLY (100)-ORIENTED THIN-FILMS OF SOL-GEL DERIVED PB[(MG1/3NB2/3)(0.675)TI-0.325]O-3 PREPARED ON TEXTURED LANIO3 ELECTRODE

Highly (100)-oriented thin films of Pb[(Mg1/3Nb2/3)(0.675)Ti-0.325]O-3 (PMNT) were fabricated by sol-gel method on (100)-textured LaNiO3 (LNO) metallic oxide electrode. The textured LaNiO3 layer was prepared by rf magnetron sputtering at 250 degrees C on Si, SiO2/Si or Pt/Ti/SiO2/Si substrates. A well orientation match was found between the PMNT and LNO layers. The annealing temperature for obtaining a pure perovskite PMNT film was reduced for about 50 degrees C by using the LNO-coated substrates comparing to that without. A well-developed grain structure was also formed for the former. Satisfactory dielectric and ferroelectric characteristics were observed from the (100)-oriented PMNT thin films prepared at 700 degrees C on LNO, as compared to the randomly oriented one on Pt electrode. However, an increase of annealing temperature would cause a more serious out-diffusion of LNO which gradually deteriorated the property of PMNT films deposited on LNO.