BAND-STRUCTURE MODEL OF GE-C ALLOY-FILMS PREPARED FROM TETRAETHYLGERMANIUM IN A RF DISCHARGE

被引：19

作者：

TYCZKOWSKI, J ^{[1
]}

ODROBINA, E ^{[1
]}

GAZICKI, M ^{[1
]}

OLCAYTUG, F ^{[1
]}

机构：

[1] VIENNA TECH UNIV,INST ALLGEMEINE ELEKTROTECH & ELEKTR,A-1040 VIENNA,AUSTRIA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80259-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Investigations were carried out on the optical absorption and d.c. conductivity of plasma deposited hydrogenated amorphous Ge-C (a-GexCy:H) films from tetraethylgermanium at various values of r.f. power (P). It was found that two groups of these films exist: dielectric (prepared at P less-than-or-equal-to 20 W) and semiconducting material (P greater-than-or-equal-to 30 W). The electronic structure of the semiconducting films was investigated by external and internal photoemission studies. An energy level diagram is proposed to describe this structure.

引用

页码：875 / 878

页数：4

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