CONTROLLED PASSIVATION OF GAAS BY SE TREATMENT

被引：29

作者：

SCIMECA, T

WATANABE, Y

MAEDA, F

BERRIGAN, R

OSHIMA, M

机构：

[1] NTT, Interdisciplinary Research Laboratories, Musashino-shi, Tokyo 180

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 14期

关键词：

D O I：

10.1063/1.109607

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The passivation of GaAs(100) by Se has been achieved in a controlled manner. Results provided by synchrotron radiation photoelectron spectroscopy show that the extent of Se bonding to As and degree of band bending can be systematically controlled by varying the GaAs substrate temperature during Se exposure. Furthermore, the formation of Ga vacancies is also found to depend on substrate temperature.

引用

页码：1667 / 1669

页数：3

共 9 条

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