TEMPERATURE-DEPENDENT CHANGES ON THE SULFUR-PASSIVATED GAAS (111)A, (100), AND (111)B SURFACES

被引：63

作者：

SCIMECA, T ^{[1
]}

MURAMATSU, Y ^{[1
]}

OSHIMA, M ^{[1
]}

OIGAWA, H ^{[1
]}

NANNICHI, Y ^{[1
]}

机构：

[1] UNIV TSUKUBA, INST MAT SCI, TSUKUBA, IBARAKI 305, JAPAN

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.44.12927

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The chemical bonding changes as a function of temperature in sulfur-passivated GaAs (111)A, (100), and (111)B surfaces were monitored in situ by synchrotron-radiation photoelectron spectroscopy. At relatively low temperatures (T congruent-to 200-degrees-C), As-S bonds are converted to Ga-S bonds. At higher temperatures, a well-ordered monolayer is observed and a predesorption state is observed for both the (111) A and (111)B surfaces at about 50-degrees-C below the S desorption temperature for the respective surfaces. It is also found that the S desorption temperature is well correlated with the coordination number of the sulfur atom on the GaAs surface.

引用

页码：12927 / 12932

页数：6

共 23 条

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