ELECTROMODULATION SPECTROSCOPY OF AN ARRAY OF MODULATION-DOPED GAAS/GA1-XALXAS QUANTUM DOTS - EXPERIMENT AND THEORY

被引:17
作者
GUMBS, G
HUANG, DH
QIANG, H
POLLAK, FH
WANG, PD
TORRES, CMS
HOLLAND, MC
机构
[1] CUNY BROOKLYN COLL, DEPT PHYS, BROOKLYN, NY 11210 USA
[2] CUNY BROOKLYN COLL, NEW YORK STATE CTR ADV TECHNOL ULTRAFAST PHOTON M, BROOKLYN, NY 11210 USA
[3] UNIV GLASGOW, DEPT ELECTR & ELECT ENGN, NANOELECTR RES CTR, GLASGOW G12 8QQ, LANARK, SCOTLAND
关键词
D O I
10.1103/PhysRevB.50.10962
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A recent photoreflectance (PR) experiment on a GaAs/Ga1-xAlxAs modulation-doped quantum dot array shows that at 77 K the quasi-two-dimensional ''2C-2H'' interband transition develops a series of evenly spaced oscillations. Such features are due to the quantization of the energy levels related to the in-plane paraboliclike potential for such reduced-dimensional systems, e.g., evenly spaced conduction and valence subbands. However, for the other dominant feature, i.e.,''1C-1H''/''1C-1L,'' no fine structure is observed since the first electron subband is occupied. We present a self-consistent field theory and numerical calculations for the intersubband absorption coefficient of an array of GaAs/Ga1-xAlxAs quantum dots with lateral parabolic confining potentials for electrons and holes. Our numerical results for the derivative of the absorption coefficient have features which are quite similar to those observed in the PR experiment.
引用
收藏
页码:10962 / 10969
页数:8
相关论文
共 36 条
[1]   ELECTROMAGNETIC RESPONSE OF QUANTUM DOTS [J].
BAKSHI, P ;
BROIDO, DA ;
KEMPA, K .
PHYSICAL REVIEW B, 1990, 42 (12) :7416-7419
[2]  
BENISTRY H, 1991, PHYS REV B, V42, P8947
[3]  
BENISTY H, 1993, NATO ADV SCI INST SE, V236, P447
[4]   MAGNETIC DEPOPULATION OF 1D SUBBANDS IN A NARROW 2D ELECTRON-GAS IN A GAAS-ALGAAS HETEROJUNCTION [J].
BERGGREN, KF ;
THORNTON, TJ ;
NEWSON, DJ ;
PEPPER, M .
PHYSICAL REVIEW LETTERS, 1986, 57 (14) :1769-1772
[5]   SELF-CONSISTENT FAR-INFRARED RESPONSE OF QUANTUM-DOT STRUCTURES [J].
BROIDO, DA ;
KEMPA, K ;
BAKSHI, P .
PHYSICAL REVIEW B, 1990, 42 (17) :11400-11403
[6]   REACTIVE ION ETCHING INDUCED DAMAGE IN GAAS AND AL0.3GA0.7AS USING SICL4 [J].
CHEUNG, R ;
THOMS, S ;
WATT, M ;
FOAD, MA ;
SOTOMAYORTORRES, CM ;
WILKINSON, CDW ;
COX, UJ ;
COWLEY, RA ;
DUNSCOMBE, C ;
WILLIAMS, RH .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (09) :1189-1198
[7]   NONLOCAL DYNAMIC-RESPONSE AND LEVEL-CROSSINGS IN QUANTUM-DOT STRUCTURES [J].
DEMEL, T ;
HEITMANN, D ;
GRAMBOW, P ;
PLOOG, K .
PHYSICAL REVIEW LETTERS, 1990, 64 (07) :788-791
[8]   DEGENERATE ELECTRON-GAS EFFECTS IN THE MODULATION SPECTROSCOPY OF PSEUDOMORPHIC AL0.32GA0.68AS/IN0.15GA0.85AS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES [J].
DIMOULAS, A ;
ZEKENTES, K ;
ANDROULIDAKI, M ;
KORNELIOS, N ;
MICHELAKIS, C ;
HATZOPOULOS, Z .
APPLIED PHYSICS LETTERS, 1993, 63 (10) :1417-1419
[9]  
GLEMBOCKI OJ, 1992, SEMICONDUCT SEMIMET, V36, P222
[10]   MANY-BODY EFFECTS IN THE ELECTROMODULATION SPECTRA OF MODULATION-DOPED QUANTUM-WELLS - THEORY AND EXPERIMENT [J].
GUMBS, G ;
HUANG, DH ;
YIN, YC ;
QIANG, H ;
YAN, D ;
POLLAK, FH ;
NOBLE, TF .
PHYSICAL REVIEW B, 1993, 48 (24) :18328-18331