RF-SPUTTERED TUNGSTEN-AMORPHOUS SILICON SCHOTTKY-BARRIER DIODES

被引：15

作者：

KHAIDAR, M ^{[1
]}

ESSAFTI, A ^{[1
]}

BENNOUNA, A ^{[1
]}

AMEZIANE, EL ^{[1
]}

BRUNEL, M ^{[1
]}

机构：

[1] UNIV SCI & MED GRENOBLE,CRISTALLOG LAB,CNRS,F-38042 GRENOBLE,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 08期

关键词：

D O I：

10.1063/1.342678

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3248 / 3252

页数：5

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