HIGH-TEMPERATURE RAMAN INVESTIGATIONS OF ARSENIC VAPOR

被引：4

作者：

HERMS, M

WUNDERWALD, U

IRMER, G

机构：

[1] FREIBERG UNIV MIN & TECHNOL,INST EXPTL PHYS,FREIBERG,GERMANY

[2] FREIBERG UNIV MIN & TECHNOL,INST NONFERROUS MET & SUPERPURE MAT,FREIBERG,GERMANY

[3] FREIBERG UNIV MIN & TECHNOL,INST THEORET PHYS,FREIBERG,GERMANY

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1993年 / 28卷 / 07期

关键词：

D O I：

10.1002/crat.2170280716

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Raman spectra of arsenic vapour were measured at temperatures up to 1210 K. The intensity ratio of the vibrational modes was used to determine the partial pressure ratio of As2 and As4. The data obtained exhibit discrepancies to existing theoretically predicted values. The reason for these differences is yet unclear.

引用

收藏

页码：965 / 971

页数：7

相关论文

共 20 条

[1] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J].

ARTHUR, JR .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) :2257-&

[2] GAS-PHASE RAMAN SPECTRA OF P4, P2, AS4, AND AS2 - RESONANCE FLUORESCENCE SPECTRUM OF (SE-80)2 RESONANCE FLUORESCENCE-RAMAN EFFECTS IN GAS-PHASE SPECTRA OF SULPHUR AND I2 - EFFECT OF PRESSURE ON DEPOLARIZATION RATIOS FOR I2 [J].

BEATTIE, IR ;

OZIN, GA ;

PERRY, RO .

JOURNAL OF THE CHEMICAL SOCIETY A -INORGANIC PHYSICAL THEORETICAL, 1970, (12) :2071-&

[3]

BOGOSHIAN S, 1987, EVALUATION STOICHIOM

[4] VAPOR-PHASE RAMAN-SPECTRA, RAMAN BAND CONTOUR ANALYSES, AND CORIOLIS CONSTANTS OF SPHERICAL TOP MOLECULES MF6 (M=S, SE, TE, MO, W, OR U), M(CH3)4 (M=C, SI, GE, SN, OR PB), P4, AS4, AND OSO4 [J].

BOSWORTH, YM ;

CLARK, RJH ;

RIPPON, DM .

JOURNAL OF MOLECULAR SPECTROSCOPY, 1973, 46 (02) :240-255

[5] IN-CAVITY LASER RAMAN SPECTROSCOPY OF VAPORS AT ELEVATED-TEMPERATURES - AS4 AND AS4O6 [J].

BRUMBACH, SB ;

ROSENBLA.GM .

JOURNAL OF CHEMICAL PHYSICS, 1972, 56 (06) :3110-&

[6] EFFECTS OF CONTROLLED AS PRESSURE ANNEALING ON DEEP LEVELS OF LIQUID-ENCAPSULATED CZOCHRALSKI GAAS SINGLE-CRYSTALS [J].

CHICHIBU, S ;

OHKUBO, N ;

MATSUMOTO, S .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (08) :3987-3993

[7] A COMPARATIVE-STUDY OF THE INTERACTION KINETICS OF AS2 AND AS4 MOLECULES WITH GA-RICH GAAS (001) SURFACES [J].

GARCIA, JC ;

NERI, C ;

MASSIES, J .

JOURNAL OF CRYSTAL GROWTH, 1989, 98 (03) :511-518

[8]

HACK K, 1990, METALLURG T B, V21, P1013

[9] THE EFFECT OF AS ON ZN DIFFUSION-INDUCED DISORDERING OF AIAS/GAAS SUPERLATTICES [J].

HARRISON, I ;

HO, HP ;

TUCK, B ;

HENINI, M ;

HUGHES, OH .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (06) :561-565

[10] EQUILIBRIA OVER GAAS IN THE KNUDSEN CELL RANGE [J].

HIRAYAMA, C ;

STRAW, RD ;

HOBGOOD, HM .

JOURNAL OF THE LESS-COMMON METALS, 1985, 109 (02) :331-338