EFFECTS OF CONTROLLED AS PRESSURE ANNEALING ON DEEP LEVELS OF LIQUID-ENCAPSULATED CZOCHRALSKI GAAS SINGLE-CRYSTALS

被引：25

作者：

CHICHIBU, S

OHKUBO, N

MATSUMOTO, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 08期

关键词：

D O I：

10.1063/1.341358

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3987 / 3993

页数：7

共 29 条

[1] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J].

ARTHUR, JR .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) :2257-&

[2]

AUCOIN TR, 1979, SOLID STATE TECHNOL, V22, P59

[3] BEHAVIOR OF LATTICE DEFECTS IN GAAS [J].

BLANC, J ;

WEISBERG, LR ;

BUBE, RH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) :225-&

[4] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J].

CHIANG, SY ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :2986-2991

[5] EFFECT OF CARBON CONCENTRATION ON THE ELECTRICAL-PROPERTIES OF LIQUID-ENCAPSULATED CZOCHRALSKI SEMIINSULATING GAAS [J].

CHICHIBU, S ;

MATSUMOTO, S ;

OBOKATA, T .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) :4316-4318

[6] HEAT TREATMENT OF GALLIUM ARSENIDE [J].

EDMOND, JT .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) :1428-1430

[7]

FOOSE CN, 1981, UNPUB 8TH BIENN C AC

[8]

HENRY RL, 1977, I PHYS C SER B, V33, P28

[9] HIGH-PURITY SEMI-INSULATING GAAS MATERIAL FOR MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS [J].

HOBGOOD, HM ;

ELDRIDGE, GW ;

BARRETT, DL ;

THOMAS, RN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) :140-149

[10] QUANTITATIVE-ANALYSIS OF CARBON IN LIQUID-ENCAPSULATED CZOCHRALSKI GAAS [J].

HOMMA, Y ;

ISHII, Y ;

KOBAYASHI, T ;

OSAKA, J .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2931-2935

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