INFRARED STUDY OF HYDROGEN ADSORBED ON C(2 X 8) AND (2 X 6) GAAS(100)

被引：53

作者：

QI, HH ^{[1
]}

GEE, PE ^{[1
]}

HICKS, RF ^{[1
]}

机构：

[1] UNIV CALIF LOS ANGELES,DEPT CHEM ENGN,LOS ANGELES,CA 90024

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 72卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.72.250

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The infrared spectra of adsorbed hydrogen and deuterium on c(2x8) and (2x6) GaAs(100) contain a series of bands from 2200 to 1200 (1600 to 1000) cm-1 that are due to arsenic hydrides, terminal gallium hydrides, and bridging gallium hydrides (and deuterides). The latter is the first known example of bridge-bonded hydrogen on a semiconductor surface. Polarized spectra reveal that the AsH and GaH bonds orient along the [110BAR] and [110] axis, respectively. These results are consistent with a GaAs surface structure composed of As and Ga dimers with dimer bonds in the [110BAR] and [110] directions.

引用

页码：250 / 253

页数：4

共 28 条

[1] HYDROGEN INDUCED STRUCTURE CHANGES OF GAAS(1 0 0) SURFACES [J].

ALLINGER, T ;

SCHAEFER, JA ;

STUHLMANN, C ;

BECKERS, U ;

IBACH, H .

PHYSICA B-CONDENSED MATTER, 1991, 170 (1-4) :481-486

[2] THE MOLECULAR-STRUCTURES OF THE GASEOUS DIMERIC MOLECULES ME2GA(MU-H)2GAME2 AND ME2GA(MU-CL)2GAME2 AS DETERMINED BY ELECTRON-DIFFRACTION [J].

BAXTER, PL ;

DOWNS, AJ ;

GOODE, MJ ;

RANKIN, DWH ;

ROBERTSON, HE .

JOURNAL OF THE CHEMICAL SOCIETY-DALTON TRANSACTIONS, 1990, (09) :2873-2881

[3] THE MOLECULAR-STRUCTURE OF GASEOUS DIMETHYLAMIDOGALLANE - CHARACTERIZATION OF THE DIMER [ME2NGAH2]2 BY ELECTRON-DIFFRACTION AND VIBRATIONAL SPECTROSCOPY [J].

BAXTER, PL ;

DOWNS, AJ ;

RANKIN, DWH ;

ROBERTSON, HE .

JOURNAL OF THE CHEMICAL SOCIETY-DALTON TRANSACTIONS, 1985, (04) :807-814

[4] SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY [J].

BIEGELSEN, DK ;

BRINGANS, RD ;

NORTHRUP, JE ;

SWARTZ, LE .

PHYSICAL REVIEW B, 1990, 41 (09) :5701-5706

[5] THE EFFECT OF HYDROGEN CHEMISORPTION ON GAAS(100) AND GAAS(1BAR1BAR1BAR) [J].

BRINGANS, RD ;

BACHRACH, RZ .

SOLID STATE COMMUNICATIONS, 1983, 45 (02) :83-86

[6] ATOMIC-STRUCTURE OF GAAS(100)-(2X1) AND GAAS(100)-(2X4) RECONSTRUCTED SURFACES [J].

CHADI, DJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :834-837

[7] REACTION-MECHANISMS IN THE THERMAL-DECOMPOSITION OF TRIETHYLARSENIC AND DIETHYLARSINE [J].

DENBAARS, SP ;

MAA, BY ;

DAPKUS, PD ;

MELAS, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (07) :2067-2069

[8] GALLANE AT LAST - SYNTHESIS AND PROPERTIES OF BINARY GALLIUM HYDRIDE [J].

DOWNS, AJ ;

GOODE, MJ ;

PULHAM, CR .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1989, 111 (05) :1936-1937

[9] STRUCTURE AND COMPOSITION OF GAAS(001) SURFACES [J].

FALTA, J ;

TROMP, RM ;

COPEL, M ;

PETTIT, GD ;

KIRCHNER, PD .

PHYSICAL REVIEW LETTERS, 1992, 69 (21) :3068-3071

[10] HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY STUDIES OF GAAS (100) SURFACES [J].

FRANKEL, DJ ;

YU, C ;

HARBISON, JP ;

FARRELL, HH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1113-1118

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