LOW-FREQUENCY PHOTOCURRENT OSCILLATIONS AND TRAPPING LEVELS IN HIGH-RESISTIVITY GAAS DOPED WITH OXYGEN

被引：26

作者：

TOKUMARU, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1970年 / 9卷 / 01期

关键词：

D O I：

10.1143/JJAP.9.95

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：95 / +

页数：1

相关论文

共 33 条

[31] CURRENT OSCILLATIONS IN PHOTOEXCITED GALLIUM-ARSENIDE [J].

VIEHMANN, W .

APPLIED PHYSICS LETTERS, 1969, 14 (01) :39-&

[32] PREPARATION OF 0.5-103OHM-CM GAAS BY ACCEPTOR PRECIPITATION DURING HEAT TREATMENT OF OXYGEN GROWN CRYSTALS [J].

WOODALL, JM ;

WOODS, JF .

SOLID STATE COMMUNICATIONS, 1966, 4 (01) :33-&

[33]

ZHDANOVA NG, 1966, FIZ TVERD TELA+, V8, P632

← 1 2 3 4 →