CONFORMAL VAPOR-PHASE GROWTH OF SUBMICRON THICK (100) GAAS FILMS

被引：7

作者：

PRIBAT, D

COLLET, C

LEGAGNEUX, P

KARAPIPERIS, L

机构：

[1] Thomson CSF, Laboratoire Central de Recherches, 91404 Orsay Cédex, Domaine de Corbeville

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 20期

关键词：

D O I：

10.1063/1.103000

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using a newly developed technique of shaped crystal growth from the vapor, we have obtained a lateral conformal GaAs single-crystal growth between two Si3N4 films. 0.6-μm-thick GaAs films of (100) surface orientation were grown over extensions of 15 μm in a standard arsenic trichloride vapor phase epitaxy reactor. The surface aspect of the films after removal of the top Si3N4 layer is specular and these films are virtually dislocation-free.

引用

页码：2007 / 2009

页数：3

共 12 条

[1] LATERAL GROWTH-PROCESS OF GAAS OVER TUNGSTEN GRATINGS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].