CONFORMAL VAPOR-PHASE EPITAXY

被引：12

作者：

PRIBAT, D

KARAPIPERIS, L

COLLET, C

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 24期

关键词：

D O I：

10.1063/1.101976

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2544 / 2546

页数：3

共 7 条

[1]

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TSAO, CW .

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[3] LATERAL EPITAXIAL OVERGROWTH OF GAAS BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION [J].

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[4] SELECTIVE SILICON EPITAXIAL GROWTH FOR DEVICE-ISOLATION TECHNOLOGY. [J].

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[5] GROWTH-PROCESS OF SILICON OVER SIO2 BY CVD - EPITAXIAL LATERAL OVERGROWTH TECHNIQUE [J].

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[6]

KARAPIPERIS L, 1988, MATER RES SOC S P, V107, P231

[7] LATERAL EPITAXIAL OVERGROWTH OF SILICON ON SIO2 [J].

RATHMAN, DD ;

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BURNS, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) :2303-2306

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