MULTIPLE CZOCHRALSKI GROWTH OF SILICON-CRYSTALS FROM A SINGLE CRUCIBLE

被引：7

作者：

LANE, RL ^{[1
]}

KACHARE, AH ^{[1
]}

机构：

[1] CALTECH,JET PROP LAB,PASADENA,CA 91103

来源：

JOURNAL OF CRYSTAL GROWTH | 1980年 / 50卷 / 02期

关键词：

D O I：

10.1016/0022-0248(80)90091-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：437 / 444

页数：8

共 11 条

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[2]

Chalmers B., 1972, Journal of Crystal Growth, V13-14, P84, DOI 10.1016/0022-0248(72)90067-X

[3]

Davis J. R., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P490

[4]

DAVIS JC, COMMUNICATION

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BAGHDADI, A ;

ELLIS, RJ ;

LESK, IA .

JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (03) :441-477

[6] CRYSTAL-GROWTH CONSIDERATIONS IN USE OF SOLAR GRADE SILICON [J].

HOPKINS, RH ;

SEIDENSTICKER, RG ;

RAICHOUDHURY, P ;

BLAIS, PD ;

MCCORMICK, JR .

JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) :493-498

[7]

HOPKINS RH, DOEJPL9543331783

[8]

Koliwad K. M., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P841

[9]

LANE RJM, UNPUBLISHED

[10] COST PREDICTIONS FOR PHOTOVOLTAIC ENERGY-SOURCES [J].

MOORE, RM .

SOLAR ENERGY, 1976, 18 (03) :225-234

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