PREPARATION AND CHARACTERIZATION OF ELECTRODEPOSITED CUGAXIN1-XSE2 THIN-FILMS

被引:13
作者
MATSUOKA, T
NAGAHORI, Y
ENDO, S
机构
[1] Department of Electrical Engineering, Science University of Tokyo, Shinjuku-ku, Tokyo
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 11期
关键词
CUGAXIN1-XSE2; THIN FILM; ELECTRODEPOSITION; CHALCOPYRITE STRUCTURE; OPTICAL BAND GAP; SOLAR CELL;
D O I
10.1143/JJAP.33.6105
中图分类号
O59 [应用物理学];
学科分类号
摘要
CuGaxIn1-xSe2 thin films have been obtained on SnO2-coated glass by the electrodeposition method from aqueous solution. The electrodeposition was carried out at various pH of electrolyte and cathode potential. The compositional, structural and optical studies were carried out by a scanning electron microscope (SEM), an energy-dispersive X-ray microanalyzer (EDX), X-ray diffractions, Raman scattering measurements and transmissivity measurements. The X-ray diffraction study confirmed that the electrodeposited films are single-phase solid solutions and have a chalcopyrite structure for the composition x less than or equal to 0.67.
引用
收藏
页码:6105 / 6110
页数:6
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