EXTENDED FUNCTION OF A HIGH-T-C TRANSITION EDGE BOLOMETER ON A MICROMACHINED SI MEMBRANE

被引：11

作者：

NEFF, H

LAUKEMPER, J

HEFLE, G

BURNUS, M

HEIDENBLUT, T

MICHALKE, W

STEINBEISS, E

机构：

[1] UNIV HANNOVER,INST HALBLEITERTECHNOL & WERKSTOFFE ELEKTROTECH,D-20167 HANNOVER,GERMANY

[2] INST PHYS HOCHTECHNOL,D-07743 JENA,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 13期

关键词：

D O I：

10.1063/1.114567

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The bolometric performance of a high-T-c transition edge bolometer has been evaluated within the temperature range 80 K<T<300 K. The detectivity D* of the device is peaking at transition midpoint and remains at moderate levels up to room temperature. The bolometric time constant of the device increases from 0.33 ms at transition midpoint to 1.55 ms at ambient temperature. The noise pattern displays 1/f behavior at low frequency and is scaling with bias current and the thermal resistance coefficient beta of the superconducting film. (C) 1995 American Institute of Physics.

引用

页码：1917 / 1919

页数：3

共 12 条

[1]

FOOTE MC, 1994, P SOC PHOTO-OPT INS, V2159, P2, DOI 10.1117/12.176130

[2]

HIRAI A, 1990, CRYOGENICS, V30, P910

[3]

Ho C. Y., 1975, THERMAL CONDUCTIVITY

[4] SUPERCONDUCTING TRANSITION OF MULTICONNECTED JOSEPHSON NETWORK [J].