IMPROVED SHALLOW P+ DIFFUSION INTO INGAASP BY A NEW SPIN-ON DIFFUSION SOURCE

被引：14

作者：

AMANN, MC

FRANZ, G

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 04期

关键词：

D O I：

10.1063/1.339625

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1541 / 1543

页数：3

共 14 条

[1]

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[3]

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[5]

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FIELD, RJ .

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[7] CONTACT RESISTANCE DEPENDENCE ON INGAASP LAYERS LATTICE-MATCHED TO INP [J].

NAKANO, Y ;

TAKAHASHI, S ;

TOYOSHIMA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (08) :L495-L497

[8] SPIN-ON SOURCES FOR BORON AND ARSENIC DIFFUSION [J].

PRASAD, PM ;

RAO, MV ;

SINGH, VPS .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1979, 47 (05) :503-508

[9]

SCHAFER K, 1961, LANDOLTBORNSTEIN, P181

[10]

SEEL F, 1979, GRUNDLAGEN ANAL CHEM, P124

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