THRESHOLD IN ELECTRON-BEAM END-PUMPED II-VI LASERS

被引:5
作者
COLAK, S
KHURGIN, J
SEEMUNGAL, W
HEBLING, A
机构
关键词
D O I
10.1063/1.339439
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2633 / 2639
页数:7
相关论文
共 17 条
[11]   SINGLE LONGITUDINAL MODE-OPERATION OF THE ELECTRON-BEAM-PUMPED SEMICONDUCTOR-LASER [J].
KHURGIN, J ;
SEEMUNGAL, W ;
COLAK, S ;
HEBLING, A .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (08) :1158-1161
[12]  
Kozlovskii V. I., 1981, Soviet Journal of Quantum Electronics, V11, P1522, DOI 10.1070/QE1981v011n11ABEH008642
[13]   INVESTIGATION OF DEGRADATION OF ELECTRON-BEAM-PUMPED CADMIUM SULFIDE LASERS. [J].
Krasavina, E.M. ;
Kryukova, I.V. .
Soviet Journal of Quantum Electronics (English translation of Kvantovaya Elektronika), 1976, 6 (11) :1354-1356
[14]  
Loshchenkova E. F., 1978, Soviet Journal of Quantum Electronics, V8, P82, DOI 10.1070/QE1978v008n01ABEH008417
[15]   GAIN-CURRENT RELATION FOR GAAS LASERS WITH N-TYPE AND UNDOPED ACTIVE LAYERS [J].
STERN, F .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) :290-294
[16]   CALCULATED SPECTRAL DEPENDENCE OF GAIN IN EXCITED GAAS [J].
STERN, F .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) :5382-5386
[17]  
VAVILOV VS, 1967, FIZ TVERD TELA+, V9, P657