STUDY OF SURFACE FERMI-LEVEL AND SURFACE-STATE DISTRIBUTION IN INALAS SURFACE-INTRINSIC-N(+) STRUCTURE BY PHOTOREFLECTANCE

被引：22

作者：

HWANG, JS ^{[1
]}

CHOU, WY ^{[1
]}

TYAN, SL ^{[1
]}

LIN, HH ^{[1
]}

LEE, TL ^{[1
]}

机构：

[1] NATL TAIWAN UNIV, DEPT ELECTR ENGN, TAIPEI, TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 16期

关键词：

D O I：

10.1063/1.114341

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The built-in electric field and surface Fermi level in the InAlAs surface-intrinsic-n(+) structures were studied by room-temperature photoreflectance. The samples were, grown by molecular beam epitaxy with an undoped layer thickness of 1000 Angstrom. The undoped layer was subsequently etched to 800, 600, 400, and 200 Angstrom. Different chemical solutions were used in the etching process and the built-in electric field is found independent of the etching process. While the surface Fermi level, in general, varies with the undoped layer thickness, there exists, for each Al concentration, a certain range of thicknesses within which the surface Fermi level is weakly pinned. From the dependence of electric field and surface Fermi level on the undoped layer thickness, we conclude that the surface states distribute over two separate regions within the energy band gap and the densities of surface states are as low as 1.02+/-0.05X10(11) cm(-2) for the distribution near the conduction band and 2.91+/-0.05X10(11) cm(-2) for the distribution near valence band. (C) 1995 American Institute of Physics.

引用

页码：2350 / 2352

页数：3

共 10 条

[1] PHOTOREFLECTANCE CHARACTERIZATION OF OMVPE GAAS ON SI [J].