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IMPURITY ANALYSIS OF SILICON EPITAXIAL LAYERS BY THE 4.2 K PHOTOLUMINESCENCE SPECTROSCOPY

被引：10
作者：
HERZOG, R
SCHRAMM, G
FLADE, T
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 96卷 / 02期
关键词：
D O I：
10.1002/pssa.2210960232
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：629 / 636
页数：8
相关论文
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