PHOTO-LUMINESCENCE ANALYSIS OF IMPURITIES IN EPITAXIAL SILICON-CRYSTALS

被引:15
作者
TAJIMA, M [1 ]
NOMURA, M [1 ]
机构
[1] HITACHI LTD,CTR DEVICE DEV,COMP GRP,KODAIRA,TOKYO 187,JAPAN
关键词
D O I
10.1143/JJAP.20.L697
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:L697 / L700
页数:4
相关论文
共 8 条
[1]   SYSTEMATICS OF BOUND EXCITONS AND BOUND MULTIEXCITON COMPLEXES FOR SHALLOW DONORS IN SILICON [J].
ELLIOTT, KR ;
MCGILL, TC .
SOLID STATE COMMUNICATIONS, 1978, 28 (07) :491-496
[2]   RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].
IRVIN, JC .
BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+
[3]   NEW PHOTOLUMINESCENCE LINE-SERIES SPECTRA ATTRIBUTED TO DECAY OF MULTIEXCITON COMPLEXES BOUND TO LI, B, AND P CENTERS IN SI [J].
KOSAI, K ;
GERSHENZ.M .
PHYSICAL REVIEW B, 1974, 9 (02) :723-726
[4]  
POGGE HB, 1980, HDB SEMICONDUCTORS, V3, pCH5
[5]  
RUNYAN WR, 1975, SEMICONDUCTOR MEASUR, pCH2
[7]  
Tajima M., 1981, SEMICONDUCTOR SILICO, P72
[8]   DETAILS OF STRUCTURE OF BOUND EXCITONS AND BOUND MULTI-EXCITON COMPLEXES IN SI [J].
THEWALT, MLW .
CANADIAN JOURNAL OF PHYSICS, 1977, 55 (17) :1463-1480