NEUTRON RADIATION-DAMAGE STUDIES OF SILICON DETECTORS

被引：20

作者：

EDWARDS, M ^{[1
]}

HALL, G ^{[1
]}

SOTTHIBANDHU, S ^{[1
]}

机构：

[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,BLACKETT LAB,LONDON SW7 2AZ,ENGLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1991年 / 310卷 / 1-2期

关键词：

D O I：

10.1016/0168-9002(91)91044-V

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Irradiations of silicon microstrips and test devices have been carried out using a neutron source with an energy spectrum similar to that produced in hadron colliders. These are part of a systematic study of radiation damage in silicon detectors for SSC or LHC applications and the test structures are examples of components integrated into microstrip detectors. Exposures of up to 10(15) neutrons/cm2 have been made. Device parameters, including leakage currents, capacitance and resistance, have been measured and damage constants and their dependence on neutron fluence and operating temperature extracted. The effects of radiation damage to the bulk silicon and its influence on charge collection have been observed.

引用

页码：283 / 286

页数：4

共 11 条

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