GENERATION-RECOMBINATION PHENOMENA IN ALMOST IDEAL SILICON P-N-JUNCTIONS

被引：22

作者：

CEROFOLINI, GF ^{[1
]}

POLIGNANO, ML ^{[1
]}

机构：

[1] SGS THOMSON MICROELECTR,I-20041 AGRATE,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 11期

关键词：

D O I：

10.1063/1.342098

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6349 / 6356

页数：8

共 34 条

[1] [Anonymous], 1981, POINT DEFECTS SEMICO
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[5] CURRENT-VOLTAGE CHARACTERISTICS OF IDEAL SILICON DIODES IN THE RANGE 300-400-K
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 646 - 647
[6] SELF-INTERSTITIALS AND GENERATION LIFETIME IN SILICON P-N-JUNCTIONS
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 100 (01): : 177 - 186
[7] MODELING THE GENERATION CURRENT DUE TO DONOR-ACCEPTOR TWINS IN SILICON P-N-JUNCTIONS
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POLIGNANO, ML
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VANZI, M
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) : 628 - 631
[8] MECHANISM OF NON-SHOCKLEY CONDUCTION IN ALMOST IDEAL SILICON JUNCTION DIODES
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POLIGNANO, ML
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3823 - 3830
[9] AN EXTENSION OF THE MODEL FOR THE EXTRACURRENT IN ALMOST IDEAL SILICON JUNCTION DIODES
CEROFOLINI, GF
POLIGNANO, ML
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1230 - 1232
[10] A COMPARISON OF GETTERING TECHNIQUES FOR VERY LARGE-SCALE INTEGRATION
CEROFOLINI, GF
POLIGNANO, ML
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) : 579 - 585

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