SELF-INTERSTITIALS AND GENERATION LIFETIME IN SILICON P-N-JUNCTIONS

[1] HEAVY-METAL GETTERING IN SILICON-DEVICE PROCESSING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 164 - 169

[2] CURRENT-VOLTAGE CHARACTERISTICS OF IDEAL SILICON DIODES IN THE RANGE 300-400-K [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 646 - 647

[3] INFLUENCE OF DAMAGE DEPTH PROFILE ON THE CHARACTERISTICS OF SHALLOW P+/N IMPLANTED JUNCTIONS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 94 (01): : 315 - 319

[4] MODELING THE GENERATION CURRENT DUE TO DONOR-ACCEPTOR TWINS IN SILICON P-N-JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) : 628 - 631

[5] MECHANISM OF NON-SHOCKLEY CONDUCTION IN ALMOST IDEAL SILICON JUNCTION DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3823 - 3830

[6] AN EXTENSION OF THE MODEL FOR THE EXTRACURRENT IN ALMOST IDEAL SILICON JUNCTION DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1230 - 1232

[7] A COMPARISON OF GETTERING TECHNIQUES FOR VERY LARGE-SCALE INTEGRATION [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) : 579 - 585

[8] CEROFOLINI GF, 1985, J APPL PHYS, V57, P1406, DOI 10.1063/1.334498

[9] CEROFOLINI GF, 1981, SEMICONDUCTOR SILICO, P724

[10] ANALYTIC SOLUTION OF THE CAVITY MODEL FOR INTERSTITIAL IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1984, 30 (06): : 3338 - 3343

[1] HEAVY-METAL GETTERING IN SILICON-DEVICE PROCESSING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 164 - 169

[2] CURRENT-VOLTAGE CHARACTERISTICS OF IDEAL SILICON DIODES IN THE RANGE 300-400-K [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 646 - 647

[3] INFLUENCE OF DAMAGE DEPTH PROFILE ON THE CHARACTERISTICS OF SHALLOW P+/N IMPLANTED JUNCTIONS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 94 (01): : 315 - 319

[4] MODELING THE GENERATION CURRENT DUE TO DONOR-ACCEPTOR TWINS IN SILICON P-N-JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) : 628 - 631

[5] MECHANISM OF NON-SHOCKLEY CONDUCTION IN ALMOST IDEAL SILICON JUNCTION DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3823 - 3830

[6] AN EXTENSION OF THE MODEL FOR THE EXTRACURRENT IN ALMOST IDEAL SILICON JUNCTION DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1230 - 1232

[7] A COMPARISON OF GETTERING TECHNIQUES FOR VERY LARGE-SCALE INTEGRATION [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) : 579 - 585

[8] CEROFOLINI GF, 1985, J APPL PHYS, V57, P1406, DOI 10.1063/1.334498

[9] CEROFOLINI GF, 1981, SEMICONDUCTOR SILICO, P724

[10] ANALYTIC SOLUTION OF THE CAVITY MODEL FOR INTERSTITIAL IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1984, 30 (06): : 3338 - 3343