A COMPARISON OF GETTERING TECHNIQUES FOR VERY LARGE-SCALE INTEGRATION

[1] GOLD SOLUBILITY IN SILICON AND GETTERING BY PHOSPHORUS [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1978, 48 (02): : 523 - 532

[2] HEAVY-METAL GETTERING IN SILICON-DEVICE PROCESSING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 164 - 169

[3] ROLE OF POINT-LIKE AND EXTENDED DEFECTS IN MOS PROCESSING [J]. SURFACE TECHNOLOGY, 1979, 8 (02): : 161 - 170

[4] BALDI L, 1978, 154TH M EL SOC PITTS

[5] INFLUENCE OF OXYGEN ON SILICON RESISTIVITY [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4206 - 4211

[6] CEROFOLINI GF, 1979, 156TH M EL SOC LOS A

[7] CEROFOLINI GF, 1981, SEMICONDUCTOR SILICO, P724

[8] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) : 1821 - 1824

[9] INFLUENCE OF PHOSPHORUS-INDUCED POINT-DEFECTS ON A GOLD-GETTERING MECHANISM IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 1036 - 1038

[10] LECROSNIER D, 1979, 155TH M EL SOC BOST

[1] GOLD SOLUBILITY IN SILICON AND GETTERING BY PHOSPHORUS [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1978, 48 (02): : 523 - 532

[2] HEAVY-METAL GETTERING IN SILICON-DEVICE PROCESSING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 164 - 169

[3] ROLE OF POINT-LIKE AND EXTENDED DEFECTS IN MOS PROCESSING [J]. SURFACE TECHNOLOGY, 1979, 8 (02): : 161 - 170

[4] BALDI L, 1978, 154TH M EL SOC PITTS

[5] INFLUENCE OF OXYGEN ON SILICON RESISTIVITY [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4206 - 4211

[6] CEROFOLINI GF, 1979, 156TH M EL SOC LOS A

[7] CEROFOLINI GF, 1981, SEMICONDUCTOR SILICO, P724

[8] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) : 1821 - 1824

[9] INFLUENCE OF PHOSPHORUS-INDUCED POINT-DEFECTS ON A GOLD-GETTERING MECHANISM IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 1036 - 1038

[10] LECROSNIER D, 1979, 155TH M EL SOC BOST