MODELING THE GENERATION CURRENT DUE TO DONOR-ACCEPTOR TWINS IN SILICON P-N-JUNCTIONS

被引：12

作者：

CEROFOLINI, GF

POLIGNANO, ML

SAVOINI, E

VANZI, M

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 03期

关键词：

D O I：

10.1109/T-ED.1985.21989

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：628 / 631

页数：4

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