MECHANISM OF NON-SHOCKLEY CONDUCTION IN ALMOST IDEAL SILICON JUNCTION DIODES

被引：21

作者：

CEROFOLINI, GF

POLIGNANO, ML

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 10期

关键词：

D O I：

10.1063/1.332892

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3823 / 3830

页数：8

共 10 条

[1] INFLUENCE OF OXYGEN ON SILICON RESISTIVITY [J].

CAZCARRA, V ;

ZUNINO, P .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4206-4211

[2] A COMPARISON OF GETTERING TECHNIQUES FOR VERY LARGE-SCALE INTEGRATION [J].

CEROFOLINI, GF ;

POLIGNANO, ML .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) :579-585

[3] NONPLANAR VLSI DEVICE ANALYSIS USING THE SOLUTION OF POISSON EQUATION [J].

GREENFIELD, JA ;

DUTTON, RW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1520-1532

[4]

GREENFIELD JA, 1980, TR G2017 STANF EL LA

[5]

Grove A S, 1967, PHYS TECHNOLOGY SEMI

[6]

Milnes A., 1973, DEEP IMPURITIES SEMI

[7] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].

SAH, CT ;

NOYCE, RN ;

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243

[8] OXYGEN PRECIPITATION FACTORS IN SILICON [J].

SHIMURA, F ;

TSUYA, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) :1062-1066

[9] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J].

SHOCKLEY, W .

BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :435-489

[10]

TAKANO Y, 1981, SEMICONDUCTOR SILICO, P469

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