OXYGEN PRECIPITATION FACTORS IN SILICON

被引：38

作者：

SHIMURA, F

TSUYA, H

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 05期

关键词：

D O I：

10.1149/1.2124027

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1062 / 1066

页数：5

共 23 条

[1]

BATAVIN VV, 1970, SOV PHYS CRYSTALLOGR, V15, P100

[2] EFFECTS OF HEAT-TREATMENT ON DISLOCATION-FREE OXYGEN-CONTAINING SILICON-CRYSTALS [J].

CAPPER, P ;

JONES, AW ;

WALLHOUSE, EJ ;

WILKES, JG .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) :1646-1655

[3]

DEKOCK AJR, 1979, EL SOC EXT ABSTR, P530

[4] PRECIPITATION OF OXYGEN IN SILICON [J].

FREELAND, PE ;

JACKSON, KA ;

LOWE, CW ;

PATEL, JR .

APPLIED PHYSICS LETTERS, 1977, 30 (01) :31-33

[5]

Hu S. M., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P333

[6] THE SHRINKAGE AND GROWTH OF OXIDATION STACKING-FAULTS IN SILICON AND THE INFLUENCE OF BULK OXYGEN [J].

HU, SM .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) :3666-3671

[7] CARBON AND OXYGEN ROLE FOR THERMALLY INDUCED MICRODEFECT FORMATION IN SILICON-CRYSTALS [J].

KISHINO, S ;

MATSUSHITA, Y ;

KANAMORI, M .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :213-215

[8] CHARACTERIZATION OF STRUCTURAL DEFECTS IN ANNEALED SILICON CONTAINING OXYGEN [J].

MAHER, DM ;

STAUDINGER, A ;

PATEL, JR .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) :3813-3825

[9]

OSAKA J, 1980, APPL PHYS LETT, V36, P288, DOI 10.1063/1.91464

[10] OXYGEN PRECIPITATION AND STACKING-FAULT FORMATION IN DISLOCATION-FREE SILICON [J].

PATEL, JR ;

JACKSON, KA ;

REISS, H .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) :5279-5288

← 1 2 3 →