THE SHRINKAGE AND GROWTH OF OXIDATION STACKING-FAULTS IN SILICON AND THE INFLUENCE OF BULK OXYGEN

被引：31

作者：

HU, SM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 07期

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D O I：

10.1063/1.328149

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：3666 / 3671

页数：6

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