IN/GAAS REACTION - EFFECT OF AN INTERVENING OXIDE LAYER

[1] DECREMOUX B, 1981, I PHYS C SER, V56, P115

[2] GROWTH OF GRADED HETEROJUNCTIONS DURING HEAT TREATMENT OF INDIUM FILMS ON GaAs. [J]. 1600, (02):

[3] THE ROLE OF COMPOUND FORMATION AND HETEROEPITAXY IN INDIUM-BASED OHMIC CONTACTS TO GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1888 - 1891

[4] OHMIC CONTACTS TO III-V-COMPOUND SEMICONDUCTORS - A REVIEW OF FABRICATION TECHNIQUES [J]. SOLID-STATE ELECTRONICS, 1983, 26 (03) : 179 - &

[5] INITIAL-STAGES OF THE PD-GAAS REACTION - FORMATION AND DECOMPOSITION OF TERNARY PHASES [J]. THIN SOLID FILMS, 1986, 136 (01) : 105 - 122

[6] INTERFACE MORPHOLOGY AND PHASE DISTRIBUTION IN THE CU2-XS/CDS HETEROJUNCTION - A TRANSMISSION ELECTRON-MICROSCOPE INVESTIGATION [J]. SOLAR ENERGY MATERIALS, 1984, 10 (3-4): : 349 - 370

[7] SANDS T, 1986, MATER RES SOC S P, V62

[8] SANDS T, J MATER RES

[9] OHMIC CONTACTS TO NORMAL-GAAS USING GRADED BAND-GAP LAYERS OF GA1-XINXAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 626 - 627

[10] WYCKOFF RWG, 1982, CRYSTAL STRUCTURES, P18

[1] DECREMOUX B, 1981, I PHYS C SER, V56, P115

[2] GROWTH OF GRADED HETEROJUNCTIONS DURING HEAT TREATMENT OF INDIUM FILMS ON GaAs. [J]. 1600, (02):

[3] THE ROLE OF COMPOUND FORMATION AND HETEROEPITAXY IN INDIUM-BASED OHMIC CONTACTS TO GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1888 - 1891

[4] OHMIC CONTACTS TO III-V-COMPOUND SEMICONDUCTORS - A REVIEW OF FABRICATION TECHNIQUES [J]. SOLID-STATE ELECTRONICS, 1983, 26 (03) : 179 - &

[5] INITIAL-STAGES OF THE PD-GAAS REACTION - FORMATION AND DECOMPOSITION OF TERNARY PHASES [J]. THIN SOLID FILMS, 1986, 136 (01) : 105 - 122

[6] INTERFACE MORPHOLOGY AND PHASE DISTRIBUTION IN THE CU2-XS/CDS HETEROJUNCTION - A TRANSMISSION ELECTRON-MICROSCOPE INVESTIGATION [J]. SOLAR ENERGY MATERIALS, 1984, 10 (3-4): : 349 - 370

[7] SANDS T, 1986, MATER RES SOC S P, V62

[8] SANDS T, J MATER RES

[9] OHMIC CONTACTS TO NORMAL-GAAS USING GRADED BAND-GAP LAYERS OF GA1-XINXAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 626 - 627

[10] WYCKOFF RWG, 1982, CRYSTAL STRUCTURES, P18