CHARACTERIZATION OF ALXGA1-XAS-GAAS LAYER STRUCTURES BY SCANNING AUGER-ELECTRON MICROSCOPY

被引:10
作者
VANOOSTROM, A
AUGUSTUS, L
NIJMAN, W
LESWIN, W
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 01期
关键词
D O I
10.1116/1.570468
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:40 / 43
页数:4
相关论文
共 22 条
  • [1] DEPTH RESOLUTION OF SPUTTER PROFILING
    ANDERSEN, HH
    [J]. APPLIED PHYSICS, 1979, 18 (02): : 131 - 140
  • [2] QUANTITATIVE-ANALYSIS OF ALXGA1-XAS BY AUGER-ELECTRON SPECTROSCOPY
    ARTHUR, JR
    LEPORE, JJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 979 - 984
  • [3] X-RAY DOUBLE-CRYSTAL DIFFRACTOMETRY OF GA1-XALXAS EPITAXIAL LAYERS
    BARTELS, WJ
    NIJMAN, W
    [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) : 518 - 525
  • [4] CHANG CC, 1977, J VAC SCI TECHNOL, V14, P950
  • [5] INTERDIFFUSION BETWEEN GAAS AND ALAS
    CHANG, LL
    KOMA, A
    [J]. APPLIED PHYSICS LETTERS, 1976, 29 (03) : 138 - 141
  • [6] DIFFUSION ACROSS MOLECULAR-BEAM-GROWN GAAS-ALXGA1-XAS INTERFACE
    DINGLE, R
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 1006 - 1006
  • [7] ABRUPT GA1-XALXAS-GAAS QUANTUM-WELL HETEROSTRUCTURES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
    DUPUIS, RD
    DAPKUS, PD
    GARNER, CM
    SU, CY
    SPICER, WE
    [J]. APPLIED PHYSICS LETTERS, 1979, 34 (05) : 335 - 337
  • [8] INTERFACE STUDIES OF ALXGA1-XAS-GAAS HETEROJUNCTIONS
    GARNER, CM
    SU, CY
    SHEN, YD
    LEE, CS
    PEARSON, GL
    SPICER, WE
    EDWALL, DD
    MILLER, D
    HARRIS, JS
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3383 - 3389
  • [9] MINIMUM AL0.5GA0.5AS-GAAS HETEROJUNCTION WIDTH DETERMINED BY SPUTTER-AUGER TECHNIQUES
    GARNER, CM
    SU, CY
    SPICER, WE
    EDWOOD, PD
    MILLER, D
    HARRIS, JS
    [J]. APPLIED PHYSICS LETTERS, 1979, 34 (09) : 610 - 611
  • [10] MATRIX EFFECTS IN QUANTITATIVE AUGER ANALYSIS OF DILUTE ALLOYS
    HALL, PM
    MORABITO, JM
    [J]. SURFACE SCIENCE, 1979, 83 (02) : 391 - 405