PHOTO-LUMINESCENCE OF GASE(CU) DOPED BY ION-IMPLANTATION

被引：7

作者：

CAPOZZI, V

MINAFRA, A

机构：

[1] LIBERA UNIV TRENTO,FAC SCI,DIPARTIMENTO FIS,I-38050 POVO,ITALY

[2] UNIV BARI,FAC SCI,INST FIS,I-70126 BARI,ITALY

来源：

SOLID STATE COMMUNICATIONS | 1981年 / 38卷 / 04期

关键词：

D O I：

10.1016/0038-1098(81)90476-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：341 / 343

页数：3

共 7 条

[1] DIRECT AND INDIRECT EXCITONIC EMISSION IN GASE [J].

CAPOZZI, V .

PHYSICAL REVIEW B, 1981, 23 (02) :836-840

[2]

CAPOZZI V, UNPUBLISHED

[3] LATTICE LOCATION OF TE IN LASER-ANNEALED TE-IMPLANTED SILICON [J].

FOTI, G ;

CAMPISANO, SU ;

RIMINI, E ;

VITALI, G .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2569-2571

[4]

HILL KJ, 1970, R6343 AERE AT EN RES

[5]

KACHIURIN GA, 1976, ION IMPLANTATION SEM

[6] LASER ANNEALING OF ARSENIC IMPLANTED SILICON [J].

KRYNICKI, J ;

SUSKI, J ;

UGNIEWSKI, S ;

GROTZSCHEL, R ;

KLABES, R ;

KREISSIG, U ;

RUDIGER, J .

PHYSICS LETTERS A, 1977, 61 (03) :181-182

[7] ION-IMPLANTATION - PROBLEMS AND PERSPECTIVES [J].

TITOV, VV .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 48 (01) :13-22

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