ELECTRON-TRANSPORT IN THIN-BASE INP/INGAAS HBTS

被引:1
作者
LUNDSTROM, MS
DODD, PE
LOVEJOY, ML
HARMON, ES
MELLOCH, MR
KEYES, BM
HAMM, RA
RITTER, D
机构
[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907
[2] NATL RENEWABLE ENERGY LAB,GOLDEN,CO
关键词
D O I
10.1109/16.163521
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
[No abstract available]
引用
收藏
页码:2658 / 2659
页数:2
相关论文
共 2 条
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NOTTENBURG, RN ;
CHEN, YK ;
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HAMM, R ;
HUMPHREY, DA .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (10) :524-526
[2]   DIFFUSIVE BASE TRANSPORT IN NARROW BASE INP/GA0.47IN0.53AS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
RITTER, D ;
HAMM, RA ;
FEYGENSON, A ;
PANISH, MB ;
CHANDRASEKHAR, S .
APPLIED PHYSICS LETTERS, 1991, 59 (26) :3431-3433