APPLYING A COMPOSITE MODEL TO IC-YIELD PROBLEM

[1] ANSLEY WG, 1968, IEEE T ELECTRON DEVI, VED15, P405

[2] GUPTA A, 1972, IEEE J SOLID ST CIRC, VSC 7, P389

[3] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &

[4] MADLAND GR, 1966, ELECTRON IND APR, P40

[5] MOORE GE, 1970, ELECTRONICS, V43, P126

[6] COST-SIZE OPTIMA OF MONOLITHIC INTEGRATED CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1537 - &

[7] A NEW LOOK AT YIELD OF INTEGRATED CIRCUITS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (08): : 1290 - &

[8] SEEDS RB, 1967, IEEE INT CONV REC 6, P60

[9] SEEDS RB, 1967, OCT IEEE INT EL DEV

[10] STAPPER CH, 1973, IEEE T ELECTRON DEVI, VED20, P655

[1] ANSLEY WG, 1968, IEEE T ELECTRON DEVI, VED15, P405

[2] GUPTA A, 1972, IEEE J SOLID ST CIRC, VSC 7, P389

[3] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &

[4] MADLAND GR, 1966, ELECTRON IND APR, P40

[5] MOORE GE, 1970, ELECTRONICS, V43, P126

[6] COST-SIZE OPTIMA OF MONOLITHIC INTEGRATED CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1537 - &

[7] A NEW LOOK AT YIELD OF INTEGRATED CIRCUITS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (08): : 1290 - &

[8] SEEDS RB, 1967, IEEE INT CONV REC 6, P60

[9] SEEDS RB, 1967, OCT IEEE INT EL DEV

[10] STAPPER CH, 1973, IEEE T ELECTRON DEVI, VED20, P655