COMPARATIVE-STUDY OF CHEMICAL AND POLARIZATION CHARACTERISTICS OF PD-SI AND PD-SIOX-SI SCHOTTKY-BARRIER-TYPE DEVICES

被引：23

作者：

TONGSON, LL

KNOX, BE

SULLIVAN, TE

FONASH, SJ

机构：

[1] Pennsylvania State University, University Park

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 03期

关键词：

D O I：

10.1063/1.326106

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The chemical nature of semitransparent (∼125 Å) palladium on silicon Schottky-barrier-type devices was determined by complementary AES and ISS techniques. Postdeposition analyses of metal-semiconductor (MS) and metal-thin-insulator-semiconductor (MIS) devices prepared without heat treatment showed that palladium silicide is formed in the MS structures, while the presence of an ultrathin (∼30 Å) purposefully grown semiconductor oxide film inhibits the chemical reaction between Pd and Si in the metal overlayer. Chemical bonding information extracted from the AES data was correlated with barrier-height measurements obtained from capacitance-vs-voltage (C-V) and current-vs-voltage (I-V) electrical characteristics of these devices.

引用

页码：1535 / 1537

页数：3

共 18 条

[1] STUDY OF CHARGING AND DISSOCIATION OF SIO2 SURFACES BY AES [J].