INTERPRETATION OF TRANSIENT CURRENTS IN AMORPHOUS-SILICON HYDRIDE P-I-N AND N-I-N DEVICES

被引：16

作者：

SHAPIRO, FR

BARYAM, Y

SILVER, M

机构：

[1] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27599

[2] WEIZMANN INST SCI,MAT RES DEPT,IL-76100 REHOVOT,ISRAEL

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 12期

关键词：

D O I：

10.1109/16.40938

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2785 / 2788

页数：4

共 11 条

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[4] THE ACCURACY OF MODELS OF DISPERSIVE TRANSPORT IN TIME-OF-FLIGHT EXPERIMENTS [J].

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[5] MICROSCOPIC TRANSIENT SIMULATION OF SEMICONDUCTORS AND INSULATORS [J].

SHAPIRO, FR ;

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[6]

SHAPIRO FR, 1989, IN PRESS AMORPHOUS S

[7]

SHAPIRO FR, 1988, MIT VLSI88471 MEM

[8]

SHAPIRO FR, 1988, AMORPHOUS SILICON TE, V118, P531

[9]

SHAPIRO FR, 1988, MIT VLSI88472 MEM

[10] TRANSPORT AND THE ELECTRONIC-STRUCTURE OF HYDROGENATED AMORPHOUS-SILICON [J].

SILVER, M ;

ADLER, D ;

SHAW, MP ;

CANNELLA, V .

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