TRANSPORT AND THE ELECTRONIC-STRUCTURE OF HYDROGENATED AMORPHOUS-SILICON

被引：20

作者：

SILVER, M

ADLER, D

SHAW, MP

CANNELLA, V

机构：

[1] WAYNE STATE UNIV,DEPT ELECT & COMP ENGN,DETROIT,MI 48202

[2] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

[3] OVON DISPLAY SYST,TROY,MI 48084

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1986年 / 53卷 / 04期

关键词：

D O I：

10.1080/01418638608244285

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：L89 / L95

页数：7

共 33 条

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ADLER, D
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[9] DEEP RECOMBINATION CENTERS IN A-SI-H
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WEISFIELD, RL
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 139 - 144
[10] CANNELLA VD, 1986, SPIE P, V617