TRANSPORT AND THE ELECTRONIC-STRUCTURE OF HYDROGENATED AMORPHOUS-SILICON

[11] CODY GD, 1984, SEMICONDUCT SEMIMET, V21, P11

[12] TOWARD A UNIFIED THEORY OF URBACHS RULE AND EXPONENTIAL ABSORPTION EDGES [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 594 - +

[13] STUDY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY TRANSIENT AND STEADY-STATE PHOTOCONDUCTIVITY MEASUREMENTS [J]. PHYSICAL REVIEW B, 1983, 27 (12): : 7460 - 7465

[14] IMPLICATIONS OF RECENT DENSITY-OF-STATES MEASUREMENTS FOR OPTICAL AND TRANSPORT-PROPERTIES OF A-SI-H [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 281 - 290

[15] PHOTOCURRENT REVERSAL AND CHARGE STORAGE IN AMORPHOUS SILICON-HYDROGEN TYPE DIODES [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 249 - 254

[16] THE SWITCHING MECHANISM IN AMORPHOUS-SILICON JUNCTIONS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 1373 - 1382

[17] LEE C, 1984, AIP CONF PR, V120, P205

[18] ANDERSON TRANSITION IN ACCUMULATION LAYER OF A-SI-H THIN-FILM TRANSISTOR [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 443 - 446

[19] PICOSECOND PHOTOLUMINESCENCE - A PROBE OF BAND-TAIL THERMALIZATION IN AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (03) : 220 - 223

[20] THE INFLUENCE OF A LONG - RANGED POTENTIAL ON THE ELECTRONIC TRANSPORT-PROPERTIES OF AMORPHOUS-SEMICONDUCTORS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 261 - 272

[11] CODY GD, 1984, SEMICONDUCT SEMIMET, V21, P11

[12] TOWARD A UNIFIED THEORY OF URBACHS RULE AND EXPONENTIAL ABSORPTION EDGES [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 594 - +

[13] STUDY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY TRANSIENT AND STEADY-STATE PHOTOCONDUCTIVITY MEASUREMENTS [J]. PHYSICAL REVIEW B, 1983, 27 (12): : 7460 - 7465

[14] IMPLICATIONS OF RECENT DENSITY-OF-STATES MEASUREMENTS FOR OPTICAL AND TRANSPORT-PROPERTIES OF A-SI-H [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 281 - 290

[15] PHOTOCURRENT REVERSAL AND CHARGE STORAGE IN AMORPHOUS SILICON-HYDROGEN TYPE DIODES [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 249 - 254

[16] THE SWITCHING MECHANISM IN AMORPHOUS-SILICON JUNCTIONS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 1373 - 1382

[17] LEE C, 1984, AIP CONF PR, V120, P205

[18] ANDERSON TRANSITION IN ACCUMULATION LAYER OF A-SI-H THIN-FILM TRANSISTOR [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 443 - 446

[19] PICOSECOND PHOTOLUMINESCENCE - A PROBE OF BAND-TAIL THERMALIZATION IN AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (03) : 220 - 223

[20] THE INFLUENCE OF A LONG - RANGED POTENTIAL ON THE ELECTRONIC TRANSPORT-PROPERTIES OF AMORPHOUS-SEMICONDUCTORS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 261 - 272