EXPERIMENTAL AND THEORETICAL-STUDIES OF THE 2DEG MOBILITY IN MODULATION-DOPED GAAS/AL(1-X)GAXAS HETEROSTRUCTURES

被引:7
作者
LIN, BJF [1 ]
TSUI, DC [1 ]
机构
[1] PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
关键词
D O I
10.1016/0039-6028(86)90441-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:397 / 398
页数:2
相关论文
共 4 条
[1]   MOBILITY TRANSITION IN THE TWO-DIMENSIONAL ELECTRON-GAS IN GAAS-ALGAAS HETEROSTRUCTURES [J].
LIN, BJF ;
TSUI, DC ;
WEIMANN, G .
SOLID STATE COMMUNICATIONS, 1985, 56 (03) :287-290
[2]   MOBILITY OF THE TWO-DIMENSIONAL ELECTRON-GAS IN GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].
LIN, BJF ;
TSUI, DC ;
PAALANEN, MA ;
GOSSARD, AC .
APPLIED PHYSICS LETTERS, 1984, 45 (06) :695-697
[3]   TEMPERATURE-DEPENDENCE OF THE ELECTRON-MOBILITY IN GAAS-GAALAS HETEROSTRUCTURES [J].
MENDEZ, EE ;
PRICE, PJ ;
HEIBLUM, M .
APPLIED PHYSICS LETTERS, 1984, 45 (03) :294-296
[4]   LOW-TEMPERATURE TWO-DIMENSIONAL MOBILITY OF A GAAS HETEROLAYER [J].
PRICE, PJ .
SURFACE SCIENCE, 1984, 143 (01) :145-156