STRUCTURE DETERMINATION FOR THE (110) SURFACE OF ZINCBLENDE STRUCTURE COMPOUND SEMICONDUCTORS

被引：48

作者：

DUKE, CB ^{[1
]}

MEYER, RJ ^{[1
]}

PATON, A ^{[1
]}

MARK, P ^{[1
]}

KAHN, A ^{[1
]}

SO, E ^{[1
]}

YEH, JL ^{[1
]}

机构：

[1] PRINCETON UNIV, DEPT ELECT ENGN, PRINCETON, NJ 08540 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 05期

关键词：

D O I：

10.1116/1.570136

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1252 / 1257

页数：6

共 50 条

[31] SEMICONDUCTOR SURFACE RECONSTRUCTION - RIPPLED GEOMETRY OF GAAS(110)
LUBINSKY, AR
DUKE, CB
LEE, BW
MARK, P
[J]. PHYSICAL REVIEW LETTERS, 1976, 36 (17) : 1058 - 1061
[32] LUBINSKY AR, 1976, B AM PHYS SOC, V21, P936
[33] MACRAE AU, 1964, J APPL PHYS, V35, P1629
[34] APPROACH TO STRUCTURE DETERMINATION OF COMPOUND SEMICONDUCTOR SURFACES BY KINEMATICAL LEED CALCULATIONS - GAAS(110) AND ZNSE(110)
MARK, P
CISNEROS, G
BONN, M
KAHN, A
DUKE, CB
PATON, A
LUBINSKY, AR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 910 - 916
[35] ELECTRONIC STATES AT UNRELAXED AND RELAXED GAAS (110) SURFACES
MELE, EJ
JOANNOPOULOS, JD
[J]. PHYSICAL REVIEW B, 1978, 17 (04) : 1816 - 1827
[36] ELECTRONIC STATES NEAR BAND-GAP FOR GAAS (110) SURFACE
MELE, EJ
JOANNOPOULOS, JD
[J]. SURFACE SCIENCE, 1977, 66 (01) : 38 - 44
[37] DYNAMICAL CALCULATION OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM GAAS(110) - INFLUENCE OF BOUNDARY-CONDITIONS, EXCHANGE POTENTIAL, LATTICE-VIBRATIONS, AND MULTILAYER RECONSTRUCTIONS
MEYER, RJ
DUKE, CB
PATON, A
KAHN, A
SO, E
YEH, JL
MARK, P
[J]. PHYSICAL REVIEW B, 1979, 19 (10) : 5194 - 5205
[38] STRUCTURE OF III-V-COMPOUND (110) SURFACE REGIONS FROM EPR DATA AND ELASTIC ENERGY MINIMIZATION CALCULATIONS
MILLER, DJ
HANEMAN, D
[J]. SURFACE SCIENCE, 1979, 82 (01) : 102 - 108
[39] ELECTRON-PARAMAGNETIC-RESONANCE STUDY OF CLEAN AND OXYGEN-EXPOSED SURFACES OF GAAS, ALSB, AND OTHER III-V COMPOUNDS
MILLER, DJ
HANEMAN, D
[J]. PHYSICAL REVIEW B, 1971, 3 (09): : 2918 - &
[40] WAVE-FUNCTIONS AND (110) SURFACE-STRUCTURE OF III-V-COMPOUNDS
MILLER, DJ
HANEMAN, D
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1267 - 1273

← 1 2 3 4 5 →