X-RAY-PHOTOELECTRON-DIFFRACTION INVESTIGATION OF STRAIN AT THE SI/GE(001) INTERFACE

被引：39

作者：

CHAMBERS, SA

LOEBS, VA

机构：

来源：

PHYSICAL REVIEW LETTERS | 1989年 / 63卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.63.640

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：640 / 643

页数：4

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