DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON .2. INFLUENCE OF PROCESSING AND MATERIALS

被引：93

作者：

OSBURN, CM

ORMOND, DW

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1972年 / 119卷 / 05期

关键词：

D O I：

10.1149/1.2404269

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：597 / +

页数：1

相关论文

共 29 条

[11] MECHANISM OF SELF-HEALING ELECTRICAL BREAKDOWN IN MOS STRUCTURES
KLEIN, N
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) : 788 - +
[12] KLEIN N, 1969, ADVAN ELECTRON ELECT, V26, P309
[13] KORZO VF, 1968, FIZ TVERD TELA+, V10, P1256
[14] KORZO VF, 1967, FIZ TVERD TELA+, V8, P2003
[15] KORZO VF, 1966, FIZ TVERD TELA+, V8, P494
[16] KRIEGLER RJ, 1971, J ELECTROCHEM SOC, V118, pC73
[17] ELECTRICAL BREAKDOWN OF MOS STRUCTURES AND ITS DEPENDENCE UPON OXIDATION PROCESS
LAVERTY, SJ
RYAN, WD
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1969, 26 (05) : 471 - +
[18] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2
LENZLINGER, M
SNOW, EH
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 278 - +
[19] THEORY OF DIELECTRIC BREAKDOWN IN SOLIDS
ODWYER, JJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) : 239 - +
[20] THEORY OF HIGH FIELD CONDUCTION IN A DIELECTRIC
ODWYER, JJ
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) : 3887 - &