SURFACE PREPARATION AND PHENOMENOLOGICAL ASPECTS OF DIRECT BONDING

被引:24
作者
HAISMA, J
SPIERINGS, GACM
MICHIELSEN, TM
ADEMA, CL
机构
[1] Philips Research Laboratories, 5656 AA Eindhoven
关键词
DIRECT BONDING; SURFACE FINISH; POLISHING STRATEGY; CLEANING; BONDING PHENOMENA;
D O I
10.1016/0165-5817(95)82002-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Various intrinsic and extrinsic parameters that play a role in the preparation of materials for direct bonding are discussed in this paper. The constitution of a material or a wafer can be described on the basis of its shape and its mechanical, chemical and physical surface finish. Subsurface damage is also of importance with respect to direct bonding applications. Different polishing strategies have been evaluated for polishing the surfaces of different materials to a finish suitable for direct bonding. Optical elements can be polished by means of mechanical polishing; refractory metals by means of dedicated mechanical polishing; III-V compounds by means of chemical polishing; semiconductors by means of tribochemical, i.e. chemomechanical polishing; hard materials by means of enhanced tribochemical polishing; noble metals by means of organo-liquid-supported tribochemical polishing; non-noble metals by means of oxidation-stimulated polishing. After such preparative treatments the material or wafer has to be cleaned, using a suitable method. Certain aspects of the bonding phenomenon itself will also be discussed in this paper.
引用
收藏
页码:23 / 46
页数:24
相关论文
共 18 条
  • [1] ABE T, 1990, SILICON INSULATOR TE, P61
  • [2] Beyer K. D., 1985, IBM Technical Disclosure Bulletin, V27, P4700
  • [3] CHEMICAL PROCESSES IN GLASS POLISHING
    COOK, LM
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1990, 120 (1-3) : 152 - 171
  • [4] DOUBLE-CANTILEVER CLEAVAGE MODE OF CRACK PROPAGATION
    GILLIS, PP
    GILMAN, JJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 647 - &
  • [5] GOSELE U, 1992, 1ST P INT S SEM WAF, V92
  • [6] SILICON-ON-INSULATOR WAFER BONDING-WAFER THINNING TECHNOLOGICAL EVALUATIONS
    HAISMA, J
    SPIERINGS, GACM
    BIERMANN, UKP
    PALS, JA
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (08): : 1426 - 1443
  • [7] SILICON-WAFER FABRICATION AND (POTENTIAL) APPLICATIONS OF DIRECT-BONDED SILICON
    HAISMA, J
    MICHIELSEN, TM
    VANDERKRUIS, FJHM
    [J]. PHILIPS JOURNAL OF RESEARCH, 1995, 49 (1-2) : 65 - 89
  • [8] DAMAGE-FREE TRIBOCHEMICAL POLISHING OF DIAMOND AT ROOM-TEMPERATURE - A FINISHING TECHNOLOGY
    HAISMA, J
    VANDERKRUIS, FJHM
    SPIERINGS, BACM
    OOMEN, JM
    FEY, FMJG
    [J]. PRECISION ENGINEERING-JOURNAL OF THE AMERICAN SOCIETY FOR PRECISION ENGINEERING, 1992, 14 (01): : 20 - 27
  • [9] HAISMA J, 1992, Patent No. 547684
  • [10] HEIJBOER WLC, 1991, J ELECTROCHEM SOC, V138, P774