DEPOSITION OF III-N THIN-FILMS BY MOLECULAR-BEAM EPITAXY

Fabrication of optoelectronic devices from III-N materials, operable in the blue and ultraviolet regions of the spectrum, has been a goal of many groups since the first infrared and red devices were commercially produced. Commercially viable blue-light-emitting diodes have now been achieved in these materials, and numerous investigators are now entering tills field. Microelectronic devices are also of considerable interest. While much of the original research on GaN and InN centered around films with the wurtzite structure, the zincblende structure nitrides have recently been receiving increasing interest because of their potential inherent advantages, e.g. increased carrier mobility. Recent results from several groups around the world have successfully addressed sonic of the traditional problems associated with growth of these materials. Chemical vapor deposition (CVD) has been a traditional growth technique for nitride growth and continues to be very successful. However, many researchers, including those growing III-V nitrides, have turned to plamsa-enhanced molecular beam epitaxy (MBE) for its important advantages in purity and in situ, analytical capabilities. This paper reviews the recent developments in MBE growth of cubic boron nitride, aluminum nitride and the two polytypes of gallium nitride.