SUBGAP OPTICAL-PROPERTIES OF AMORPHOUS INP PRODUCED BY ION-IMPLANTATION

被引：5

作者：

WENDLER, E

MULLER, P

BACHMANN, T

WESCH, W

机构：

[1] Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, D-07743 Jena

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1994年 / 176卷 / 01期

关键词：

D O I：

10.1016/0022-3093(94)90215-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Amorphous InP layers were produced by ion implantation into semi-insulating crystalline InP. The absorption coefficient and the refractive index of this amorphous InP were determined in the frequency range 0.2 eV < ($) over bar h omega < 1.3 eV. The refractive index is increased by 20% with respect to the unimplanted substrate. The sub-gap absorption coefficient yields an optical gap of about 0.65 eV. The comparison of the spectral dependence of the absorption coefficient of ion implanted amorphous InP with that of flash evaporated amorphous InP indicates a higher degree of disorder in the implanted than in the evaporated material.

引用

收藏

页码：85 / 90

页数：6

相关论文

共 20 条

[1] STOICHIOMETRIC DISTURBANCES IN ION-IMPLANTED COMPOUND SEMICONDUCTORS [J].

CHRISTEL, LA ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5050-5055

[2] DISORDER AND THE OPTICAL-ABSORPTION EDGE OF HYDROGENATED AMORPHOUS-SILICON [J].

CODY, GD ;

TIEDJE, T ;

ABELES, B ;

BROOKS, B ;

GOLDSTEIN, Y .

PHYSICAL REVIEW LETTERS, 1981, 47 (20) :1480-1483

[3] THE STUDY OF HEAVY-ION DAMAGE IN PURE COPPER [J].

STATHOPOULOS, AY .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 44 (02) :285-308

[4] ELECTRONIC-PROPERTIES OF FLASH-EVAPORATED AMORPHOUS GASB FILMS [J].

GHEORGHIU, A ;

RAPPENEAU, T ;

DUPIN, JP ;

THEYE, ML .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :881-884

[5] ELECTRONIC-PROPERTIES AND STRUCTURE OF AMORPHOUS INP [J].

GHEORGHIU, A ;

OUCHENE, M ;

RAPPENEAU, T ;

THEYE, ML .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :621-624

[6]

Gotz G., 1988, HIGH ENERGY ION BEAM

[7]

HEHL K, 1980, PHYS STATUS SOLIDI A, V51, P181

[8] LOW-TEMPERATURE RECRYSTALLIZATION OF ION-IMPLANTED INP [J].

MULLER, P ;

WESCH, W ;

SOLOVYEV, VS ;

GAIDUK, PI ;

WENDLER, E ;

KOMAROV, FF ;

GOTZ, G .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 (pt 2) :721-725

[9] ELECTRONIC-STRUCTURE OF AMORPHOUS-III-V AND AMORPHOUS-II-VI COMPOUND SEMICONDUCTORS AND THEIR DEFECTS [J].

OREILLY, EP ;

ROBERTSON, J .

PHYSICAL REVIEW B, 1986, 34 (12) :8684-8695

[10] INFLUENCE OF DISORDER ON THE ELECTRONIC DISTRIBUTION OF INP BY X-RAY AND PHOTOELECTRON SPECTROSCOPIES [J].

OUCHENE, M ;

SENEMAUD, C ;

BELIN, E ;

GHEORGHIU, A ;

THEYE, ML .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :625-628