LOW-TEMPERATURE RECRYSTALLIZATION OF ION-IMPLANTED INP

被引：6

作者：

MULLER, P ^{[1
]}

WESCH, W ^{[1
]}

SOLOVYEV, VS ^{[1
]}

GAIDUK, PI ^{[1
]}

WENDLER, E ^{[1
]}

KOMAROV, FF ^{[1
]}

GOTZ, G ^{[1
]}

机构：

[1] INST APPL PHYS PROBLEMS, MINSK, BELARUS

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 80-1卷 / pt 2期

关键词：

D O I：

10.1016/0168-583X(93)96217-Z

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The low temperature recrystallization behaviour of completely amorphized InP layers is investigated by means of RBS channeling and TEM measurements in the temperature region 150 to 400-degrees-C as a function of the annealing time. The resulting layers consist of a well annealed and a defective near surface layer containing a high density of microtwins. The thickness of the well annealed region increases with the annealing time and reaches a saturation value which depends on the temperature and is independent of the thickness of the initial amorphous layer. With increasing temperature the time to reach the saturation value decreases.

引用

页码：721 / 725

页数：5

共 13 条

[1] ROOM-TEMPERATURE ANNEALING OF SI IMPLANTATION DAMAGE IN INP [J].