SOLID-PHASE EPITAXIAL REGROWTH OF ION-IMPLANTED AMORPHIZED INP

被引:12
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LICOPPE, C
NISSIM, YI
KRAUZ, P
HENOC, P
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10.1063/1.97154
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O59 [应用物理学];
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页码:316 / 318
页数:3
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  • [1] EPITAXIAL REGROWTH OF (100) INP LAYERS AMORPHIZED BY ION-IMPLANTATION AT ROOM-TEMPERATURE
    AUVRAY, P
    GUIVARCH, A
    LHARIDON, H
    PELOUS, G
    SALVI, M
    HENOC, P
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6202 - 6207
  • [2] BAHIR G, 1985, MATER RES SOC S P, V45, P297
  • [3] ION-IMPLANTATION INDUCED DISPLACEMENT OF GA AND AS IN GAAS
    BHATTACHARYA, RS
    [J]. APPLIED PHYSICS LETTERS, 1984, 44 (02) : 195 - 197
  • [4] DAMAGE ANNEALING BEHAVIOR OF SE IMPLANTED GAAS
    BHATTACHARYA, RS
    RAI, AK
    PRONOKO, PP
    NARAYAN, J
    LING, SC
    WILSON, SR
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1983, 44 (01) : 61 - 69
  • [5] STOICHIOMETRIC DISTURBANCES IN ION-IMPLANTED COMPOUND SEMICONDUCTORS
    CHRISTEL, LA
    GIBBONS, JF
    [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5050 - 5055
  • [6] REGROWTH KINETICS OF AMORPHOUS-GE LAYERS CREATED BY GE-74 AND SI-28 IMPLANTATION OF GE CRYSTALS
    CSEPREGI, L
    KULLEN, RP
    MAYER, JW
    SIGMON, TW
    [J]. SOLID STATE COMMUNICATIONS, 1977, 21 (11) : 1019 - 1021
  • [7] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI
    CSEPREGI, L
    MAYER, JW
    SIGMON, TW
    [J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158
  • [8] REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS
    GAMO, K
    INADA, T
    MAYER, JW
    EISEN, FH
    RHODES, CG
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (02): : 85 - 89
  • [9] GIBBONS JF, 1975, PROJECTED RANGE STAT
  • [10] ACCEPTOR IMPLANTATION IN FE-DOPED, SEMI-INSULATING INDIUM-PHOSPHIDE
    INADA, T
    TAKA, S
    YAMAMOTO, Y
    [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) : 6623 - 6629